DMG7702SFG
30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
POWERDI ?
Product Summary
Features
V (BR)DSS
R DS(ON)
Package
I D
T A = +25°C
?
DIOFET utilizes a unique patented process to monolithically
integrate a MOSFET and a Schottky in a single die to deliver:
Low R DS(ON) – minimize conduction losses
10m ? @ V GS = 10V
12 A
Low V SD – reducing the losses due to body diode conduction
30V
15m ? @ V GS = 4.5V
POWERDI3333-8
9.5A
Low Q rr – lower Q rr of the integrated Schottky reduces body
diode switching losses
Low gate capacitance (Q g /Q gs ) ratio – reduces risk of shoot-
through or cross conduction currents at high frequencies
Description
This MOSFET has been designed to minimize the on-state resistance
(R DS(on) ) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
?
?
?
?
?
Small form factor thermally efficient package enables higher
density end products
Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
?
?
Backlighting
Power Management Functions
Mechanical Data
?
DC-DC Converters
?
?
Case: POWERDI3333-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
?
?
?
?
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.072 grams (approximate
Drain
S
S
Pin 1
S
8
7
6
5
G
Gate
D
Top View
D
D
D
Bottom View
1
2 3 4
Top View
Source
Internal Schematic
Pin Configuration
Ordering Information (Note 4)
Part Number
DMG7702SFG-7
DMG7702SFG-13
Case
POWERDI3333-8
POWERDI3333-8
Packaging
2000/Tape & Reel
3000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. ?
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
DMG7702SFG
Document number: DS35248 Rev. 6 - 2
1 of 8
www.diodes.com
July 2012
? Diodes Incorporated
相关PDF资料
DMG8601UFG-7 MOSFET 2N-CH 20V 6.1A DFN
DMG8822UTS-13 MOSFET ARRAY 20V 4.9A 8TSSOP
DMG8880LK3-13 MOSFET N-CH 30V 11A TO252-3L
DMG9926UDM-7 MOSFET N-CH DUAL 20V 4.2A SOT-26
DMG9926USD-13 MOSFET 2N-CH 20V 8A SOP8L
DMN100-7 MOSFET N-CH 30V 1.1A SC59-3
DMN1019UFDE-7 MOSFET N CH 12V 11A U-DFN2020-6E
DMN2004DMK-7 MOSFET DUAL N-CHAN 20V SOT-26
相关代理商/技术参数
DMG8601UFG 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMG8601UFG-7 功能描述:MOSFET LDO POSITIVE REG 2.7V/1A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMG8822UTS 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMG8822UTS-13 功能描述:MOSFET N-Ch Dual MOSFET 20V VDSS 8V VGSS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMG8880LK3 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET
DMG8880LK3-13 功能描述:MOSFET N-Ch FET VDSS 20V VGSS 20V PD 1.68W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMG8880LSS 制造商:Diodes Incorporated 功能描述:MOSFET N CH W DIO 30V 11.6A SO8 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, W DIO, 30V, 11.6A, SO8 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, W DIO, 30V, 11.6A, SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:11.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.007ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.5V ;RoHS Compliant: Yes
DMG8880LSS-13 功能描述:MOSFET MOSFET N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube